公开(公告)号：US20150123139A1

公开(公告)日：2015-05-07

申请号：US14258374

申请日：2014-04-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong-seob KIM ,  In-jun HWANG ,  Jai-kwang SHIN ,  Jae-joon OH ,  Soo-gine CHONG ,  Sunk-yu HWANG

IPC: H01L29/778 ,  H01L29/66

CPC classification number: H01L29/66462 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/432 ,  H01L29/7787

Abstract: Provided are a high electron mobility transistor and/or a method of manufacturing the same. The high electron mobility transistor includes a channel layer, a channel supply layer formed on the channel layer to generate a two-dimensional electron gas (2DEG), a depletion forming layer formed on the channel supply layer, a gate electrode formed on the depletion forming layer, and a barrier layer formed between the depletion forming layer and the gate electrode. Holes may be prevented from being injected into the depletion forming layer from the gate electrode, thereby reducing a gate forward current.

Abstract translation: 提供高电子迁移率晶体管和/或其制造方法。 高电子迁移率晶体管包括沟道层，形成在沟道层上的沟道供应层，以产生二维电子气（2DEG），在沟道供应层上形成的耗尽形成层，形成于耗尽层上的栅电极 层，以及形成在耗尽形成层和栅电极之间的阻挡层。 可以防止孔从栅电极注入耗尽形成层，从而减小栅极正向电流。