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公开(公告)号：US20190058089A1
公开(公告)日：2019-02-21
申请号：US16104405
申请日：2018-08-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Tae Bae KIM , Sang Kyun IM , Hyun Kyung KIM , Young Hun CHOI
Abstract: A light emitting device includes a semiconductor layer, and a light emitting layer disposed in the semiconductor layer and having a composition ratio of Ga(1-x)InxN. x is greater than 0.14 but less than 0.16 to emit a green light from the light emitting layer, or greater than 0.22 but less than 0.26 to emit a blue light from the light emitting layer.
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