公开(公告)号：US20140008705A1

公开(公告)日：2014-01-09

申请号：US13835669

申请日：2013-03-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joon- Young Choi ,  Kyung-Ho Lee ,  Sang-Jun Choi ,  Tae-Hyoung Koo ,  Sam-Jong Choi

IPC: H01L29/78 ,  H01L29/04

CPC classification number: H01L29/7827 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14689 ,  H01L29/045

Abstract: A semiconductor device includes field regions formed in a substrate, and n-type impurity regions disposed between the field regions. At least one of the side surfaces of the field regions has a {100}, {310}, or {311} plane.

Abstract translation: 半导体器件包括形成在衬底中的场区域和设置在场区域之间的n型杂质区域。 场区域的至少一个侧面具有{100}，{310}或{311}平面。