公开(公告)号：US20240321875A1

公开(公告)日：2024-09-26

申请号：US18603591

申请日：2024-03-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Wooseok PARK ,  Jaeho Jeon ,  Donghoon Hwang ,  Taehyun Ryu ,  Namhyun Lee

IPC: H01L27/088 ,  H01L29/06 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

CPC classification number: H01L27/088 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/775 ,  H01L29/78696

Abstract: A semiconductor device includes a substrate, an active region protruding from an upper surface of the substrate and extending in a first horizontal direction, a plurality of nanosheet stacks on the active region, a plurality of gate lines extending in a second horizontal direction intersecting the first horizontal direction, on the active region, and surrounding the plurality of nanosheet stacks, and a first insulating pattern between two nanosheet stacks adjacent in the first horizontal direction among the plurality of nanosheet stacks, on the active region, and extending in a vertical direction perpendicular to the first horizontal direction and the second horizontal direction, wherein the first insulating pattern is in contact with the plurality of nanosheet stacks.