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公开(公告)号：US11424251B2
公开(公告)日：2022-08-23
申请号：US17219175
申请日：2021-03-31
发明人： Byounggon Kang , Taejun Yoo , Seunghyun Yang , Dalhee Lee
IPC分类号： H01L27/11 , G11C11/41 , G11C11/412 , G11C11/417 , H01L23/528
摘要： A semiconductor device is provided. The semiconductor device includes power supply lines extending in a first direction; first transistors, each of which is formed in a first region and has a first threshold voltage; and second transistors, each of which is formed in a second region and has a second threshold voltage higher than the first threshold voltage. One of the plurality of power supply lines is interposed between the first region and the second region, the first transistors implement a first portion of a multiplexer, a clock buffer and a first latch that are disposed on a data path, the second transistors implement a second portion of the multiplexer circuit and a second latch that are disposed on a feedback path, and the first portion of the multiplexer circuit and the second portion of the multiplexer circuit are disposed in a common location along the first direction.
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公开(公告)号：US20230077532A1
公开(公告)日：2023-03-16
申请号：US17946761
申请日：2022-09-16
发明人： Wookyu KIM , Changbeom Kim , Taejun Yoo , Seungmin Lee
IPC分类号： G06F30/392 , G06F30/394 , G06F30/327
摘要： A standard cell and an integrated circuit including the same are is provided. The standard cell is provided in first and second rows. The standard cell includes: a first circuit region provided in the first row and including a plurality of first transistors; a second circuit region provided in the second row and including a plurality of second transistors; a first input pin provided in the first circuit region and configured to receive a first input signal; and a second input pin provided in the second circuit region and configured to receive a second input signal. The first input signal is input to gate terminals of each of the plurality of first transistors, and the second input signal is input to gate terminals of each of the plurality of second transistors. The first circuit region is symmetric with respect to a second horizontal direction and the second circuit region is symmetric with respect to the second horizontal direction.
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公开(公告)号：US20220108989A1
公开(公告)日：2022-04-07
申请号：US17219175
申请日：2021-03-31
发明人： Byounggon Kang , Taejun Yoo , Seunghyun Yang , Dalhee Lee
IPC分类号： H01L27/11 , H01L23/528 , G11C11/417 , G11C11/412
摘要： A semiconductor device is provided. The semiconductor device includes power supply lines extending in a first direction; first transistors, each of which is formed in a first region and has a first threshold voltage; and second transistors, each of which is formed in a second region and has a second threshold voltage higher than the first threshold voltage. One of the plurality of power supply lines is interposed between the first region and the second region, the first transistors implement a first portion of a multiplexer, a clock buffer and a first latch that are disposed on a data path, the second transistors implement a second portion of the multiplexer circuit and a second latch that are disposed on a feedback path, and the first portion of the multiplexer circuit and the second portion of the multiplexer circuit are disposed in a common location along the first direction.
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