公开(公告)号：US20220076732A1

公开(公告)日：2022-03-10

申请号：US17245334

申请日：2021-04-30

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Taesung KANG ,  Youngkyu LEE ,  Kyoungmin KIM ,  Ilgweon KIM ,  Bokyeon WON ,  Seokjae LEE ,  Sungho JANG ,  Joon HAN

IPC分类号： G11C11/4091 ,  H01L27/108

摘要： An integrated circuit device includes a sense amplifier configured to sense a voltage change of a bit line, wherein the sense amplifier includes: a sense amplifier unit connected to the bit line and a complementary bit line, configured to sense the voltage change of the bit line in response to a control signal, configured to adjust voltages of a sensing bit line and a complementary sensing bit line based on the sensed voltage change, and including a first PMOS transistor and a first NMOS transistor; and a first offset canceling unit connecting the bit line to the complementary sensing bit line in response to an offset canceling signal, and including a first offset canceling transistor arranged between the first NMOS transistor and the first PMOS transistor, wherein the first offset canceling transistor shares a common impurity region with the first NMOS transistor.