公开(公告)号：US20240090199A1

公开(公告)日：2024-03-14

申请号：US18233061

申请日：2023-08-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jingyu Park ,  Jongyoung Park ,  Taeyoung Koh ,  Kiyong Kim ,  Sundoo Kim ,  Jaehyun Kim

IPC: H10B12/00

CPC classification number: H10B12/315 ,  H10B12/34 ,  H10B12/482

Abstract: A semiconductor device includes a first active pattern on a substrate, the first active pattern extending in a third direction having an acute angle with respect to a first direction and a second direction, the first direction and the second direction being substantially parallel to an upper surface of the substrate and substantially perpendicular to each other, a first conductive filling pattern on an upper surface of a central portion of the first active pattern, the first conductive filling pattern having a shape of a parallelogram, a gate structure extending in the first direction in an upper portion of the first active pattern, and a bit line structure on the first conductive filling pattern and extending in the second direction.