公开(公告)号：US20240086110A1

公开(公告)日：2024-03-14

申请号：US18124290

申请日：2023-03-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Bei QI ,  Kun Zhang ,  Kun Dou ,  Ruyi Zhang ,  Zongyuan Zhang ,  Yutao Li ,  Dan Cao ,  Tianyi Zhang

IPC: G06F3/06

CPC classification number: G06F3/0659 ,  G06F3/061 ,  G06F3/0647 ,  G06F3/0683

Abstract: A data storage method includes: in response to a stream ID carried by an IO write request of a host satisfying a first preset condition, writing data corresponding to the IO write request into a first storage unit; and in response to the stream ID carried by the IO write request satisfying a second preset condition, writing the data corresponding to the IO write request into a second storage unit, wherein the stream ID indicates write latency requirement information of the data corresponding to the IO write request, wherein a data write latency indicated by the stream ID satisfying the first preset condition is less than the data write latency indicated by the stream ID satisfying the second preset condition, wherein a read and write performance of the first storage unit is higher than the read and write performance of the second storage unit.

公开(公告)号：US12153802B2

公开(公告)日：2024-11-26

申请号：US18177985

申请日：2023-03-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kun Zhang ,  Bei Qi ,  Dan Cao ,  Kun Dou ,  Tianyi Zhang ,  Zongyuan Zhang ,  Ruyi Zhang ,  Yutao Li

IPC: G06F3/06 ,  G06F16/22

Abstract: A log-structured merge-tree (LSM-Tree) based key-value (KV) data storage method includes writing KV data into a NAND flash memory. The KV data includes a key-value pair including a key and a corresponding value. The KV data is stored in a key-value solid state drive (KVSSD), which includes a storage class memory (SCM) and the NAND flash memory. The method further includes storing metadata of the KV data in the SCM. The metadata of the KV data includes the key and index information of the corresponding value of the KV data, and the index information of the corresponding value of the KV data indicates address information of the KV data in the NAND flash memory.

公开(公告)号：US12164809B2

公开(公告)日：2024-12-10

申请号：US18124290

申请日：2023-03-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Bei Qi ,  Kun Zhang ,  Kun Dou ,  Ruyi Zhang ,  Zongyuan Zhang ,  Yutao Li ,  Dan Cao ,  Tianyi Zhang

IPC: G06F3/06

Abstract: A data storage method includes: in response to a stream ID carried by an IO write request of a host satisfying a first preset condition, writing data corresponding to the IO write request into a first storage unit; and in response to the stream ID carried by the IO write request satisfying a second preset condition, writing the data corresponding to the IO write request into a second storage unit, wherein the stream ID indicates write latency requirement information of the data corresponding to the IO write request, wherein a data write latency indicated by the stream ID satisfying the first preset condition is less than the data write latency indicated by the stream ID satisfying the second preset condition, wherein a read and write performance of the first storage unit is higher than the read and write performance of the second storage unit.