公开(公告)号：US10943900B2

公开(公告)日：2021-03-09

申请号：US16395841

申请日：2019-04-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyun Chul Sagong ,  Sang Woo Pae ,  Ki Hyun Choi ,  June Kyun Park ,  Uk Jin Jung

IPC: H01L27/088 ,  H01L21/28 ,  H01L29/78 ,  H01L29/66 ,  H01L29/06 ,  H01L21/8234

Abstract: A semiconductor device is provided. The Semiconductor device includes a substrate, a first fin type pattern and a second fin type pattern which protrude from an upper surface of the substrate and are spaced apart from each other, a first semiconductor pattern on the first fin type pattern, a second semiconductor pattern on the second tin type pattern and a blocking pattern between the first semiconductor pattern and the second semiconductor pattern, a part of the first semiconductor pattern being inserted in the blocking pattern.