SEMICONDUCTOR DEVICE
    2.
    发明申请

    公开(公告)号:US20250054913A1

    公开(公告)日:2025-02-13

    申请号:US18581483

    申请日:2024-02-20

    Abstract: A semiconductor device includes first to third semiconductor chips consecutively stacked. The first semiconductor chip comprises a first semiconductor substrate. A circuit layer is on a top surface of the first semiconductor substrate. First pads are on a top surface of the circuit layer. The first pads are electrically connected to the circuit layer. The second semiconductor chip comprises a second semiconductor substrate. Passive devices are in the second semiconductor substrate. Second pads are on a bottom surface of the second semiconductor substrate. The second pads are electrically connected to the passive devices. Third pads are on a top surface of the second semiconductor substrate. The third semiconductor chip comprises fourth pads on a bottom surface of the third semiconductor chip. The first pads and the second pads are directly connected to each other. The third pads and the fourth pads are directly connected to each other.

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