公开(公告)号：US20220392878A1

公开(公告)日：2022-12-08

申请号：US17585122

申请日：2022-01-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SUNGWOO PARK ,  HEONWOO KIM ,  SANGCHEON PARK ,  WONIL LEE

IPC: H01L25/10 ,  H01L23/538 ,  H01L23/00 ,  H01L25/065

Abstract: A semiconductor device including an interposer including a central region and an edge region entirely surrounding the central region, wherein the interposer includes a wiring structure disposed in the first region and a metal structure disposed continuously within the entirety of the second region, a first semiconductor chip mounted in the central region and connected to the wiring structure, and a second semiconductor chip mounted in the central region adjacent to the first semiconductor chip and connected to the second wiring structure.