公开(公告)号：US11341305B2

公开(公告)日：2022-05-24

申请号：US16433266

申请日：2019-06-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kwang-Hoon Kim ,  Do-Yun Kim ,  Ki-Wook Song ,  Sung-Bo Shim ,  Ji-Hye Lee ,  Dong-Chul Ihm ,  Woo-Young Cheon

IPC: G01N21/95 ,  G06F30/367 ,  H01L21/66 ,  G06F30/398

Abstract: A method of predicting a shape of a semiconductor device includes implementing a modeled semiconductor shape with respect to a designed semiconductor layout, extracting a plurality of samples by independently linearly combining process variables with respect to the modeled semiconductor shape; generating virtual spectrums with respect to ones of the extracted plurality of samples through optical analysis, indexing the virtual spectrums to produce indexed virtual spectrums, generating a shape prediction model by using the indexed virtual spectrums as an input and the modeled semiconductor shape as an output, and indexing a spectrum measured from a manufactured semiconductor device and inputting the spectrum to the shape prediction model to predict a shape of the manufactured semiconductor device.