公开(公告)号：US09551653B2

公开(公告)日：2017-01-24

申请号：US15078232

申请日：2016-03-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woong-Kyu Son ,  Kwang-Hoon Kim ,  Deok-Yong Kim ,  Sung-Soo Moon ,  Jung-Hoon Byun ,  Ji-Hye Lee ,  Choon-Shik Leem ,  Soo-Bok Chin

IPC: G01N21/33 ,  H01L21/66 ,  G01N21/21 ,  G01N21/88 ,  G01N21/95 ,  G01N21/956 ,  G03F7/20

CPC classification number: H01L22/12 ,  G01N21/21 ,  G01N21/33 ,  G01N21/8806 ,  G01N21/9501 ,  G01N21/95607 ,  G01N2021/8848 ,  G03F7/70625

Abstract: The inventive concept provides apparatuses and methods for monitoring semiconductor fabrication processes in real time using polarized light. In some embodiments, the apparatus comprises a light source configured to generate light, a beam splitter configured to reflect the light toward the wafer being processed, an objective polarizer configured to polarize the light reflected toward the wafer and to allow light reflected by the wafer to pass therethrough, a blaze grating configured to separate light reflected by the wafer according to wavelength, an array detector configured to detect the separated light and an analyzer to analyze the three-dimensional profile of the structure/pattern being formed in the wafer.

Abstract translation: 本发明的概念提供了使用偏振光来实时监控半导体制造工艺的装置和方法。 在一些实施例中，该装置包括被配置为产生光的光源，被配置为将光朝向正被处理的晶片反射的分束器，物镜偏振器，被配置为使朝向晶片反射的光偏振，并允许由晶片反射的光 通过其配置成根据波长分离由晶片反射的光的火焰光栅，被配置为检测分离的光的阵列检测器和分析器，以分析在晶片中形成的结构/图案的三维轮廓。

公开(公告)号：US10133785B2

公开(公告)日：2018-11-20

申请号：US14979796

申请日：2015-12-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kwang-Hoon Kim ,  Man-Keun Seo ,  Sang-Kyoo Jeong

IPC: G06F17/30

Abstract: A data storage device includes a first memory device configured to provide first read data in response to a first read command, a controller including a hardware filter configured to generate first hint information based on a result of comparison of the first read data with filtering condition data and a processor configured to determine whether the first read data is to be filtered based on the first hint information, selectively filter the first read data based on the filtering condition data based on the determination result, and generate first filtered data, and a second memory device configured to store the first filtered data. The controller communicates the first filtered data to a host.

公开(公告)号：US09322771B2

公开(公告)日：2016-04-26

申请号：US14197608

申请日：2014-03-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woong-Kyu Son ,  Kwang-Hoon Kim ,  Deok-Yong Kim ,  Sung-Soo Moon ,  Jung-Hoon Byun ,  Ji-Hye Lee ,  Choon-Shik Leem ,  Soo-Bok Chin

IPC: G01N21/33 ,  G01N21/21 ,  G03F7/22 ,  G03F7/20

CPC classification number: H01L22/12 ,  G01N21/21 ,  G01N21/33 ,  G01N21/8806 ,  G01N21/9501 ,  G01N21/95607 ,  G01N2021/8848 ,  G03F7/70625

Abstract: The inventive concept provides apparatuses and methods for monitoring semiconductor fabrication processes in real time using polarized light. In some embodiments, the apparatus comprises a light source configured to generate light, a beam splitter configured to reflect the light toward the wafer being processed, an objective polarizer configured to polarize the light reflected toward the wafer and to allow light reflected by the wafer to pass therethrough, a blaze grating configured to separate light reflected by the wafer according to wavelength, an array detector configured to detect the separated light and an analyzer to analyze the three-dimensional profile of the structure/pattern being formed in the wafer.

Abstract translation: 本发明的概念提供了使用偏振光来实时监控半导体制造工艺的装置和方法。 在一些实施例中，该装置包括被配置为产生光的光源，被配置为将光朝向正被处理的晶片反射的分束器，物镜偏振器，被配置为使朝向晶片反射的光偏振，并允许由晶片反射的光 通过其配置成根据波长分离由晶片反射的光的火焰光栅，被配置为检测分离的光的阵列检测器和分析器，以分析在晶片中形成的结构/图案的三维轮廓。

公开(公告)号：US11341305B2

公开(公告)日：2022-05-24

申请号：US16433266

申请日：2019-06-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kwang-Hoon Kim ,  Do-Yun Kim ,  Ki-Wook Song ,  Sung-Bo Shim ,  Ji-Hye Lee ,  Dong-Chul Ihm ,  Woo-Young Cheon

IPC: G01N21/95 ,  G06F30/367 ,  H01L21/66 ,  G06F30/398

Abstract: A method of predicting a shape of a semiconductor device includes implementing a modeled semiconductor shape with respect to a designed semiconductor layout, extracting a plurality of samples by independently linearly combining process variables with respect to the modeled semiconductor shape; generating virtual spectrums with respect to ones of the extracted plurality of samples through optical analysis, indexing the virtual spectrums to produce indexed virtual spectrums, generating a shape prediction model by using the indexed virtual spectrums as an input and the modeled semiconductor shape as an output, and indexing a spectrum measured from a manufactured semiconductor device and inputting the spectrum to the shape prediction model to predict a shape of the manufactured semiconductor device.

公开(公告)号：US09360308B2

公开(公告)日：2016-06-07

申请号：US14248673

申请日：2014-04-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byung Hyun Hwang ,  Kwang-Hoon Kim ,  Woongkyu Son ,  Chulgi Song ,  Choonshik Leem

IPC: G01N23/20 ,  G01B15/02

CPC classification number: G01B15/02 ,  G01N23/20

Abstract: A method for analyzing an object includes measuring a first reflectivity of light from a surface and measuring a second reflectivity of light from the object, after the object is formed on the surface. A variation between the first and second reflectivities is calculated, and the variation is transformed by a predetermined transform. A thickness of the object is determined based on the transformed variation.

Abstract translation: 用于分析物体的方法包括在物体形成在表面上之后测量来自表面的光的第一反射率和测量来自物体的光的第二反射率。 计算第一和第二反射率之间的变化，并且通过预定变换来变换变化。 基于变换的变化确定对象的厚度。