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公开(公告)号:US20250054870A1
公开(公告)日:2025-02-13
申请号:US18926130
申请日:2024-10-24
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Woonchun Kim , Seungwan Shin , Gun Lee
IPC: H01L23/538 , H01L21/48 , H01L21/768 , H01L23/31 , H01L23/48 , H01L23/498 , H01L23/522 , H01L23/528 , H01L23/532 , H01L25/10
Abstract: A semiconductor package includes; a first redistribution structure including first redistribution conductors, a semiconductor chip on the first redistribution structure and including connection pads electrically connecting the first redistribution conductors, a connection conductor on the first redistribution structure, laterally spaced apart from the semiconductor chip, and electrically connected to the first redistribution conductors, an encapsulant on the first redistribution structure and sealing the semiconductor chip and at least a portion of the connection conductor, a barrier layer extending along an upper surface of the encapsulant, and a second redistribution conductor on the barrier layer and penetrating the barrier layer to contact the connection conductor.
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公开(公告)号:US12154859B2
公开(公告)日:2024-11-26
申请号:US17707002
申请日:2022-03-29
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Woonchun Kim , Seungwan Shin , Gun Lee
IPC: H01L23/538 , H01L21/48 , H01L21/768 , H01L23/31 , H01L23/48 , H01L23/498 , H01L23/522 , H01L23/528 , H01L23/532 , H01L25/10
Abstract: A semiconductor package includes; a first redistribution structure including first redistribution conductors, a semiconductor chip on the first redistribution structure and including connection pads electrically connecting the first redistribution conductors, a connection conductor on the first redistribution structure, laterally spaced apart from the semiconductor chip, and electrically connected to the first redistribution conductors, an encapsulant on the first redistribution structure and sealing the semiconductor chip and at least a portion of the connection conductor, a barrier layer extending along an upper surface of the encapsulant, and a second redistribution conductor on the barrier layer and penetrating the barrier layer to contact the connection conductor.
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