公开(公告)号：US09711523B2

公开(公告)日：2017-07-18

申请号：US14574456

申请日：2014-12-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeonggil Lee ,  Yeon-Sil Sohn ,  Woonghee Sohn ,  Kihyun Yoon ,  Myoungbum Lee ,  Tai-Soo Lim ,  Yong Chae Jung

IPC: H01L27/11582

CPC classification number: H01L27/11582

Abstract: Provided is a semiconductor device, including gate structures on a substrate, the gate structures extending parallel to a first direction and being spaced apart from each other by a separation trench interposed therebetween, each of the gate structures including insulating patterns stacked on the substrate and a gate electrode interposed therebetween; vertical pillars connected to the substrate through the gate structures; an insulating spacer in the separation trench covering a sidewall of each of the gate structures; and a diffusion barrier structure between the gate electrode and the insulating spacer.