公开(公告)号：US20140322911A1

公开(公告)日：2014-10-30

申请号：US14328496

申请日：2014-07-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YOUNG-HO LEE ,  Keonsoo Kim ,  Hyunchul Back ,  Jinhyun Shin ,  Seungwook Choi

IPC: H01L21/768

CPC classification number: H01L21/76879 ,  H01L21/76816 ,  H01L21/7682 ,  H01L21/76834 ,  H01L21/76885 ,  H01L21/76897

Abstract: A method of forming a semiconductor device may include forming a contact mold layer on a substrate; forming an interconnection mold layer on the contact mold layer that includes a material having an etching selectivity with respect to the contact mold layer; forming grooves in the interconnection mold layer that extend in a first direction and expose the contact mold layer; forming holes in the contact mold layer connected to the grooves by etching a part of the contact mold layer exposed by the groove; and forming contact portions in the holes and interconnections in the groove. A diffusion coefficient of mobile atoms in the contact mold layer is greater than a diffusion coefficient of mobile atoms in a nitride.

Abstract translation: 形成半导体器件的方法可以包括在基片上形成接触模层; 在所述接触模层上形成互连模层，所述互连模层包括相对于所述接触模层具有蚀刻选择性的材料; 在所述互连模制层中形成沿第一方向延伸并暴露所述接触模制层的凹槽; 通过蚀刻由凹槽露出的接触模具层的一部分，在连接到凹槽的接触模层中形成孔; 并且在孔中形成接触部分和凹槽中的互连。 接触模具层中的移动原子的扩散系数大于氮化物中的移动原子的扩散系数。