公开(公告)号：US20160099267A1

公开(公告)日：2016-04-07

申请号：US14872691

申请日：2015-10-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung Wook LEE ,  Yi Tae KIM ,  Jong Eun PARK ,  Jung Chak AHN ,  Kyung Ho LEE ,  Tae Hun LEE ,  Hee Geun JEONG

IPC: H01L27/146 ,  H04N9/04 ,  H04N5/374

CPC classification number: H01L27/1463 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14689 ,  H04N5/374 ,  H04N9/045

Abstract: An image sensor such as a complementary metal-oxide-semiconductor (CMOS) image sensor and a method of manufacturing the same are provided. The CMOS image sensor includes: a semiconductor substrate including a first surface and a third surface formed by removing a part of the semiconductor substrate from a second surface opposite to the first surface; a plurality of active regions which are formed between the first surface and the third surface and each of which includes a photoelectric conversion element generating charges in response to light input through the third surface; and an isolation region vertically formed from either of the first and third surfaces to isolate the active regions from one another. When the CMOS image sensor is viewed from the above of the third surface, each of the active regions may have round corners and concave sides.

Abstract translation: 提供了诸如互补金属氧化物半导体（CMOS）图像传感器的图像传感器及其制造方法。 CMOS图像传感器包括：半导体衬底，其包括通过从与第一表面相对的第二表面去除半导体衬底的一部分而形成的第一表面和第三表面; 多个有源区，形成在第一表面和第三表面之间，每个有源区包括响应于通过第三表面输入的光而产生电荷的光电转换元件; 以及从所述第一表面和所述第三表面中的任一个垂直地形成的隔离区域，以将所述活性区域彼此隔离。 当从第三表面的上方观察CMOS图像传感器时，每个有源区域可以具有圆角和凹面。