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1.发明申请公开(公告)号：US20250079211A1
公开(公告)日：2025-03-06
申请号：US18653168
申请日：2024-05-02
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sewoong Lee , Jaeho Jang , Yohwan Joo , Jinkyou Choi
Abstract: An anomaly detection method includes receiving data regarding semiconductor process variables, generating an anomaly detection model through a convolution algorithm and a transformer algorithm, classifying the data by using the generated anomaly detection model, and detecting, based upon the classified data, an anomaly associated with the semiconductor process variables.
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