公开(公告)号：US20180033470A1

公开(公告)日：2018-02-01

申请号：US15729771

申请日：2017-10-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： KI WON LEE ,  Seung Jun BAE ,  Joon Young PARK ,  Yong Cheol BAE

IPC: G11C7/12 ,  H03K19/00

CPC classification number: G11C7/12 ,  G11C5/147 ,  G11C7/1057 ,  G11C29/021 ,  G11C29/028 ,  G11C29/50008 ,  G11C2207/2254 ,  H03K19/0005

Abstract: A method of operating a memory controller includes: receiving a data signal from a memory device, wherein the data signal has an output high level voltage (VOH); determining a reference voltage according to the VOH; and comparing the data signal with the reference voltage to determine a received data value, wherein the VOH is proportional to a power supply voltage (VDDQ).

公开(公告)号：US20170148496A1

公开(公告)日：2017-05-25

申请号：US15426603

申请日：2017-02-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ki Won LEE ,  Seung Jun BAE ,  Joon Young PARK ,  Yong Cheol BAE

IPC: G11C7/12 ,  H03K19/00

CPC classification number: G11C7/12 ,  G11C5/147 ,  G11C7/1057 ,  G11C29/021 ,  G11C29/028 ,  G11C29/50008 ,  G11C2207/2254 ,  H03K19/0005

Abstract: A semiconductor memory device includes a ZQ calibration unit configured to generate a pull-up VOH code according to a first target VOH proportional to a power supply voltage and an output driver configured to generate a data signal having a VOH proportional to the power supply voltage based on the pull-up VOH code, wherein VOH means “output high level voltage.”