公开(公告)号：US10551326B2

公开(公告)日：2020-02-04

申请号：US15855520

申请日：2017-12-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyo Hyeong Kang ,  Kang Woong Ko ,  Sung Yoon Ryu ,  Gil Woo Song ,  Jae Hyung Ahn ,  Chul Hyung Yoo ,  Kyoung Hwan Lee ,  Sung Ho Jang ,  Yong Ju Jeon ,  Hyoung Jo Jeon

IPC: G01N21/95 ,  H01L21/66 ,  G06K9/03 ,  G06K9/62 ,  G01N21/88 ,  H01L21/67

Abstract: A method for measuring a semiconductor device is provided. A method for measuring a semiconductor device includes defining an interest area and an acceptable area in a chip area on a wafer; performing a first measurement of the chip area with a spectral imaging device to acquire spectrum data of the chip area; assuming the distribution of the spectrum data of a first pixel in the acceptable area is a normal distribution; calculating a distance from a central point on the normal distribution to second pixels in the interest area; selecting a position of a second pixel having a distance from the central point on the normal distribution greater than a predetermined range, among the second pixels, as a candidate position; and performing a second measurement of the candidate position.