公开(公告)号：US11366318B2

公开(公告)日：2022-06-21

申请号：US16328439

申请日：2017-11-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyun-Seok Jeon ,  Min-Soo Koo ,  Yong-Woo Lee

IPC: G02B27/01 ,  G06F3/01 ,  G06F3/16

Abstract: Disclosed is an electronic device. The electronic device includes: a display; a communicator comprising a circuitry, for obtaining, from an external device, an image captured by the external device and information about at least one among an acceleration and angular velocity of the external device, the acceleration and angular velocity being measured while capturing an image; and a processor for identifying a degree of movement of the external device per a preset unit time period based on the obtained information, and controlling the display to display the image with an adjusted field of view (FOV) based on the degree of movement.

公开(公告)号：US09818825B2

公开(公告)日：2017-11-14

申请号：US15145252

申请日：2016-05-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong-Kwon Kim ,  Yong-Woo Lee

IPC: H01L29/10 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/161 ,  H01L29/165 ,  H01L29/16 ,  H01L27/11

CPC classification number: H01L29/1054 ,  H01L21/823807 ,  H01L21/823821 ,  H01L27/092 ,  H01L27/0924 ,  H01L27/1104 ,  H01L27/1116 ,  H01L28/00 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165

Abstract: A method of fabricating a semiconductor device is provided as follows. A channel layer is formed on a strain relaxed buffer (SRB) layer. A first etching process is performed on the channel layer and the SRB layer to form a plurality of trenches. The trenches penetrate through the channel layer and into the SRB layer to a first depth. First liners are formed on first sidewalls of the trenches having the first depth. The first liners cover the first sidewalls. A second etching process is performed on the SRB layer exposed through the trenches. The second etching process is performed on the SRB layer using a gas etchant having etch selectivity with respect to the first liners so that after the performing of the second etching process, the first liners remain on the first sidewalls.