公开(公告)号：US11862111B1

公开(公告)日：2024-01-02

申请号：US18096352

申请日：2023-01-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Se Whan Na ,  Jong-Hee Na ,  Byoungyoon Jang ,  Yoochae Chung ,  Hyunwook Lim

IPC: G09G3/3291 ,  G09G3/20

CPC classification number: G09G3/3291 ,  G09G3/2096 ,  G09G2310/0291 ,  G09G2320/0276 ,  G09G2320/041 ,  G09G2320/0626 ,  G09G2320/0673 ,  G09G2330/028 ,  G09G2354/00 ,  G09G2360/16

Abstract: A semiconductor device is provided. The semiconductor device includes: an offset compensation circuit configured to obtain first data including first low-order bit data, second low-order bit data and high-order bit data, select two compensation values from among a plurality of compensation values based on the first low-order bit data, identify a final compensation value by interpolating the two compensation values based on the second low-order bit data, and compensate the final compensation value to generate second data; and a source driver configured to interpolate and output two gamma voltages from among a plurality of gamma voltages based on the second data.