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1.发明授权公开(公告)号：US10831095B2
公开(公告)日：2020-11-10
申请号：US15973912
申请日：2018-05-08
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Won Joo Park , Hyung Joo Lee , Seuk Hwan Choi , Dong Seok Nam , Yoon Taek Han
Abstract: A critical dimension measurement system includes a voltage measurement circuit, a control circuit, and a critical dimension measurement circuit. The voltage measurement circuit may measure potentials of mask patterns of a photomask. The control circuit may include an information storage circuit for storing distribution information on the potentials of the mask patterns, measured by the voltage measurement circuit, and information on layout patterns corresponding to the mask patterns of the photomask. The critical dimension measurement circuit may be operated, by the control circuit, in a first measurement mode and a second measurement mode running for a shorter time than the first measurement mode, and measure critical dimensions of the mask patterns.
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2.发明申请公开(公告)号：US20190094684A1
公开(公告)日：2019-03-28
申请号：US15973912
申请日：2018-05-08
Applicant: Samsung Electronics Co., Ltd.
Inventor： Won Joo Park , Hyung Joo Lee , Seuk Hwan Choi , Song Seok Nam , Yoon Taek Han
Abstract: A critical dimension measurement system includes a voltage measurement circuit, a control circuit, and a critical dimension measurement circuit. The voltage measurement circuit may measure potentials of mask patterns of a photomask. The control circuit may include an information storage circuit for storing distribution information on the potentials of the mask patterns, measured by the voltage measurement circuit, and information on layout patterns corresponding to the mask patterns of the photomask. The critical dimension measurement circuit may be operated, by the control circuit, in a first measurement mode and a second measurement mode running for a shorter time than the first measurement mode, and measure critical dimensions of the mask patterns.
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