公开(公告)号：US20130161722A1

公开(公告)日：2013-06-27

申请号：US13712109

申请日：2012-12-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung-Ho SON ,  Yoon-Hae KIM ,  Hong-Seong KANG ,  Yoon-Seok LEE ,  Junjie XIONG

IPC: H01L29/78 ,  H01L29/788

CPC classification number: H01L29/78 ,  H01L27/0629 ,  H01L28/20 ,  H01L29/66545 ,  H01L29/788

Abstract: A semiconductor device may include a gate structure on a substrate, the gate structure including a first metal; an insulating interlayer covering the gate structure on the substrate; a resistance pattern in the insulating interlayer, the resistance pattern having a top surface lower than a top surface of the insulating interlayer and including a second metal different from the first metal at least at an upper portion thereof; and/or a first contact plug through a first portion of the insulating interlayer, the first contact plug making direct contact with the upper portion of the resistance pattern.

Abstract translation: 半导体器件可以包括在衬底上的栅极结构，栅极结构包括第一金属; 覆盖基板上的栅极结构的绝缘夹层; 绝缘中间层中的电阻图案，电阻图案具有比绝缘中间层的顶表面低的顶表面，并且至少在其上部包括不同于第一金属的第二金属; 和/或通过绝缘中间层的第一部分的第一接触插塞，第一接触插塞与电阻图案的上部直接接触。