公开(公告)号：US20200243764A1

公开(公告)日：2020-07-30

申请号：US16560516

申请日：2019-09-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： You-Jin JUNG ,  Masayuki Terai

IPC: H01L45/00 ,  H01L27/24

Abstract: A variable resistance memory device includes a memory unit including a first electrode, a variable resistance pattern and a second electrode sequentially stacked on a substrate, a first selection structure on the memory unit, a third electrode structure on the first selection structure, and an anti-fuse including a fourth electrode, a second selection structure and a fifth electrode structure sequentially stacked. The fourth electrode directly contacts the second selection structure, and a bottom of the fourth electrode is lower than a bottom of the second electrode.