公开(公告)号：US10990463B2

公开(公告)日：2021-04-27

申请号：US16218720

申请日：2018-12-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minsu Kim ,  Jiseok Kang ,  Minsoo Kim ,  Byungjik Kim ,  Wonjae Shin ,  Donghoon Lee ,  Yeonhwa Lee ,  Ho-Young Lee ,  Youjin Jang ,  Insu Choi

IPC: G06F11/07 ,  G06F12/02 ,  G06F12/0804 ,  G06F11/14

Abstract: A semiconductor memory module may include a random access memory, a nonvolatile memory, a buffer memory, and a controller configured to execute a reading operation on the buffer memory in response to an activation of a control signal. The controller may be further configured to execute a flush operation of storing first data, which are stored in the random access memory, in the nonvolatile memory, according to a result of the reading operation.