公开(公告)号：US20170345884A1

公开(公告)日：2017-11-30

申请号：US15444455

申请日：2017-02-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung Hun CHOI ,  Young Tak KIM ,  Da Il EOM ,  Sun Jung LEE

IPC: H01L49/02 ,  H01L29/78 ,  H01L27/06

CPC classification number: H01L28/20 ,  H01L27/0629 ,  H01L29/7851

Abstract: A semiconductor device and a manufacturing method thereof, the semiconductor device including an insulation layer; a metal resistance pattern on the insulation layer; a spacer on a side wall of the metal resistance pattern; and a gate contact spaced apart from the spacer, the gate contact extending into the insulation layer, wherein the insulation layer includes a projection projecting therefrom, the projection contacting the gate contact.

公开(公告)号：US20190280081A1

公开(公告)日：2019-09-12

申请号：US16424996

申请日：2019-05-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung Hun CHOI ,  Young Tak KIM ,  Da Il EOM ,  Sun Jung LEE

IPC: H01L49/02 ,  H01L27/06 ,  H01L29/78

Abstract: A semiconductor device and a manufacturing method thereof, the semiconductor device including an insulation layer; a metal resistance pattern on the insulation layer; a spacer on a side wall of the metal resistance pattern; and a gate contact spaced apart from the spacer, the gate contact extending into the insulation layer, wherein the insulation layer includes a projection projecting therefrom, the projection contacting the gate contact.