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公开(公告)号：US10716755B2
公开(公告)日：2020-07-21
申请号：US16237913
申请日：2019-01-02
发明人： Youngbeom Pyon , Kichul Park , Inkwon Kim , Ki Hoon Jang , Byoungho Kwon , Sangkyun Kim , Boun Yoon
IPC分类号： H01L27/112 , H01L23/535 , H01L23/528 , H01L27/11565 , H01L27/1157 , H01L27/11573 , H01L27/11575 , H01L27/11582 , H01L21/768 , H01L27/11551 , H01L27/11578 , H01L21/02 , H01L23/538 , A61K9/06 , A61K45/06 , A61K9/00 , A61K31/197 , A61K47/10 , A61K47/12 , A61K47/20 , A61K47/32 , A61K47/44
摘要： A semiconductor device includes a substrate, a peripheral structure, a lower insulating layer, and a stack. The substrate includes a peripheral circuit region and a cell array region. The peripheral structure is on the peripheral circuit region. The lower insulating layer covers the peripheral circuit region and the cell array region and has a protruding portion protruding from a flat portion. The stack is on the lower insulating layer and the cell array region, and includes upper conductive patterns and insulating patterns which are alternately and repeatedly stacked.
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公开(公告)号：US10177160B2
公开(公告)日：2019-01-08
申请号：US15661280
申请日：2017-07-27
发明人： Youngbeom Pyon , Kichul Park , Inkwon Kim , Ki Hoon Jang , Byoungho Kwon , Sangkyun Kim , Boun Yoon
IPC分类号： H01L21/00 , H01L23/528 , H01L27/112 , H01L23/535 , H01L27/11551 , H01L27/11578 , H01L21/768 , H01L21/02 , H01L23/538
摘要： A semiconductor device includes a substrate, a peripheral structure, a lower insulating layer, and a stack. The substrate includes a peripheral circuit region and a cell array region. The peripheral structure is on the peripheral circuit region. The lower insulating layer covers the peripheral circuit region and the cell array region and has a protruding portion protruding from a flat portion. The stack is on the lower insulating layer and the cell array region, and includes upper conductive patterns and insulating patterns which are alternately and repeatedly stacked.
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