公开(公告)号：US20140319690A1

公开(公告)日：2014-10-30

申请号：US14258107

申请日：2014-04-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangryol YANG ,  Soonwook JUNG ,  Kyoungseob KIM ,  Youngsub YOU ,  Byunghong CHUNG ,  Hanmei CHOI

IPC: H01L29/40 ,  H01L21/283

CPC classification number: H01L21/283 ,  H01L21/76805 ,  H01L29/401

Abstract: A semiconductor device includes a storage node contact on a substrate, and a lower electrode on the storage node contact, a lower sidewall of the lower electrode being covered by a contact residue of a same material as the storage node contact.

Abstract translation: 半导体器件包括在衬底上的存储节点接触和存储节点接触件上的下电极，下电极的下侧壁由与存储节点接触件相同的材料的接触残余物覆盖。