公开(公告)号：US20240421189A1

公开(公告)日：2024-12-19

申请号：US18596179

申请日：2024-03-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Beom Jin Park ,  Myung Gil Kang ,  Dong Won Kim ,  Chang Woo Noh ,  Yu Jin Jeon

IPC: H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

Abstract: The present disclosure relates to semiconductor devices. An example semiconductor device includes a substrate including first and second regions, a first bridge pattern extending in a first direction on the first region, a first gate structure extending in a second direction intersecting the first direction, first epitaxial patterns connected to the first bridge pattern on side surfaces of the first gate structure, first inner spacers interposed between the substrate and the first bridge pattern and between the first gate structure and the first epitaxial patterns, a second bridge pattern extending in the first direction on the second region, a second gate structure extending in the second direction, second epitaxial patterns connected to the second bridge pattern on side surfaces of the second gate structure, and second inner spacers interposed between the substrate and the second bridge pattern and between the second gate structure and the second epitaxial patterns.