公开(公告)号：US20140078842A1

公开(公告)日：2014-03-20

申请号：US14030066

申请日：2013-09-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong-min OH ,  Yun-young LEE ,  Hoyoung SONG ,  Chiwook KIM ,  Donghyun SOHN

IPC: G11C29/04

CPC classification number: G11C29/04 ,  G11C8/08 ,  G11C8/14 ,  G11C29/50 ,  G11C29/785 ,  G11C29/808

Abstract: Provided is a method of preventing simultaneous activation of redundancy memory line or spare word lines, the method including: programming a fail address of a memory line determined to be defective; reprogramming the fail address if a first spare line for the memory line is determined to be defective; storing additional information with respect to the reprogrammed fail address; and activating a second spare line and inactivating the first spare line, referring to the additional information.

Abstract translation: 提供了一种防止冗余存储器线或备用字线的同时激活的方法，所述方法包括：对确定为有缺陷的存储器线的故障地址进行编程; 如果存储线的第一备用线被确定为有缺陷，则重新编程故障地址; 存储关于重新编程的故障地址的附加信息; 并且参考附加信息激活第二备用线路并使第一备用线路停用。