公开(公告)号：US20210082478A1

公开(公告)日：2021-03-18

申请号：US16852986

申请日：2020-04-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeonghyeon CHO ,  Seonghoon JOO ,  llhan CHOI

IPC: G11C7/04 ,  G11C7/16 ,  G11C7/06 ,  G11C7/22

Abstract: A semiconductor memory device includes: a temperature sensor configured to sense an internal temperature of the semiconductor memory device and generate a temperature signal; and a temperature code storage unit configured to receive the temperature signal in response to a temperature code write control signal that is generated when an operation corresponding to a specific command is performed, generate an operating temperature code corresponding to the temperature signal, compare the operating temperature code with a previously stored temperature code, store a larger temperature code of the operating temperature code and the previously stored temperature code as a maximum temperature code, and output the maximum temperature code to an external source in response to a temperature code read control signal.