公开(公告)号：US20230022805A1

公开(公告)日：2023-01-26

申请号：US17657010

申请日：2022-03-29

Applicant: SAMSUNG ELECTRONICS CO.,LTD.

Inventor： DONGMIN HAN ,  Wonhyeok KIM ,  SEONGJOO NAH ,  HEEGEUN JEONG

IPC: H01L27/146

Abstract: An image sensor includes a dual vertical gate. The dual vertical gate includes two vertical extension portions that are spaced apart from each other in a first direction and vertically extend in a second direction perpendicular to the first direction into a substrate, and a connection portion that connects the two vertical extension portions to each other. An element isolation layer is disposed adjacent to a side surface of the vertical extension portion in the first direction. The two vertical extension portions are separated by a separation area that extends in the second direction, and a top surface of the separation area is lower than a top surface of the element isolation layer.