公开(公告)号：US20210257374A1

公开(公告)日：2021-08-19

申请号：US17035082

申请日：2020-09-28

Applicant: SAMSUNG ELECTRONICS co., LTD.

Inventor： KI SEOK LEE ,  Jae Hyun YOON ,  Kyu Jin KIM ,  Keun Nam KIM ,  Hui-Jung KIM ,  Kyu Hyun LEE ,  SANG-IL HAN ,  Sung Hee HAN ,  Yoo Sang HWANG

IPC: H01L27/108

Abstract: A includes an element isolation region, a first active region bounded by the element isolation region and that extends in a first direction and includes first and second parts disposed at a first level, and a third part disposed at a second level located above the first level, and a gate electrode disposed inside each of the element isolation region and the first active region and that extends in a second direction different from the first direction. The second part is spaced apart in the first direction from the first part, and the third part contacts each of the first and second parts. A first width in the second direction of the first part is less than a second width in the second direction of the third part.