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公开(公告)号：US20210257374A1
公开(公告)日：2021-08-19
申请号：US17035082
申请日：2020-09-28
发明人： KI SEOK LEE , Jae Hyun YOON , Kyu Jin KIM , Keun Nam KIM , Hui-Jung KIM , Kyu Hyun LEE , SANG-IL HAN , Sung Hee HAN , Yoo Sang HWANG
IPC分类号： H01L27/108
摘要： A includes an element isolation region, a first active region bounded by the element isolation region and that extends in a first direction and includes first and second parts disposed at a first level, and a third part disposed at a second level located above the first level, and a gate electrode disposed inside each of the element isolation region and the first active region and that extends in a second direction different from the first direction. The second part is spaced apart in the first direction from the first part, and the third part contacts each of the first and second parts. A first width in the second direction of the first part is less than a second width in the second direction of the third part.
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公开(公告)号：US20190096890A1
公开(公告)日：2019-03-28
申请号：US15945401
申请日：2018-04-04
发明人： MYEONG-DONG LEE , JUN-WON LEE , KI SEOK LEE , BONG-SOO KIM , SEOK HAN PARK , SUNG HEE HAN , YOO SANG HWANG
IPC分类号： H01L27/108 , H01L23/532 , H01L23/522
摘要： A semiconductor device includes a substrate having a trench, a bit line in the trench, a first spacer extending along the trench and at least a portion of a side surface of the bit line and in contact with the bit line, and a second spacer disposed within the trench on the first spacer. The bit line is narrower than the trench, and the first spacer includes silicon oxide. A method of forming a semiconductor device includes forming a trench in a substrate, forming a bit line within the first trench of width less than that of the first trench, and forming a first spacer that lines a portion of the trench and includes silicon oxide in contact with at least a portion of a side surface of the bit line, and forming a second spacer over the first spacer in the trench.
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