公开(公告)号：US10147876B1

公开(公告)日：2018-12-04

申请号：US15693376

申请日：2017-08-31

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Lidu Huang ,  Mac D. Apodaca ,  Toshiki Hirano ,  Ailian Zhao ,  Guy Charles Wicker ,  Federico Nardi

IPC: H01L45/00 ,  G11C13/00 ,  H01L27/24

Abstract: Systems and methods for providing a phase change memory that includes a phase change material, such as a chalcogenide material, in series with a heating element that comprises multiple thermal interfaces are described. The multiple thermal interfaces may cause the heating element to have a reduced bulk thermal conductivity or a lower heat transfer rate across the heating element without a corresponding reduction in electrical conductivity. The phase change material may comprise a germanium-antimony-tellurium compound or a chalcogenide glass. The heating element may include a plurality of conducting layers with different thermal conductivities. In some cases, the heating element may include two or more conducting layers in which the conducting layers comprise the same electrically conductive material or compound but are deposited or formed using different temperatures, carrier gas pressures, flow rates, and/or film thicknesses to create thermal interfaces between the two or more conducting layers.