专利检索 ap:("SANDISK TECHNOLOGIES LLC") AND inv:"Akihiro Shimada" 第 1 页

1.

发明授权
Three-dimensional memory device including contact via structures for multi-level stepped surfaces and methods for forming the same 有权

公开(公告)号：US11410924B2

公开(公告)日：2022-08-09

申请号：US16999388

申请日：2020-08-21

申请人： SANDISK TECHNOLOGIES LLC

发明人： Haruki Suwa , Keisuke Shigemura , Akihiro Shimada

IPC分类号： H01L21/00 , H01L23/522 , H01L27/11582 , H01L27/11519 , H01L27/1157 , H01L27/11556 , H01L27/11565 , H01L27/11524

摘要： A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers containing steps, memory stack structures extending through the alternating stack, a first contact via structure which contacts a top surface of a respective upper electrically conductive layer in a first step, a first dielectric spacer which does not contact any of the electrically conductive layers other than the respective upper electrically conductive layer in the first step, a second contact via structure which contacts a top surface of a respective lower electrically conductive layer in the first step, and a second dielectric spacer which extends through the respective upper electrically conductive layer, and which contacts the respective lower electrically conductive layer.