公开(公告)号：US10566059B2

公开(公告)日：2020-02-18

申请号：US16014028

申请日：2018-06-21

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Vinh Diep ,  Ching Huang Lu ,  Henry Chin ,  Changyuan Chen

IPC: G11C11/34 ,  G11C16/04 ,  H01L27/1157 ,  H01L29/423 ,  H01L27/11573 ,  H01L29/792 ,  H01L27/11582

Abstract: Systems, methods, and devices of the various embodiments provide both “string-sharing” drain select gate electrodes and “string-selective” drain select gate electrodes in vertical NAND strings. Various embodiments may provide two or more vertical NAND strings sharing a common drain select gate electrode while also having separate additional drain select gate electrodes not electrically connected across the two or more vertical NAND strings.