公开(公告)号：US11450624B2

公开(公告)日：2022-09-20

申请号：US16888188

申请日：2020-05-29

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Noriaki Oda ,  Teruo Okina

IPC: H01L23/48 ,  H01L23/00 ,  H01L25/18 ,  H01L25/00 ,  H01L25/065

Abstract: Semiconductor devices can be formed over a semiconductor substrate, and interconnect-level dielectric material layers embedding metal interconnect structures can be formed thereupon. In one embodiment, a pad-connection-via-level dielectric material layer, a proximal dielectric diffusion barrier layer, and a pad-level dielectric material layer can be formed. Bonding pads surrounded by dielectric diffusion barrier portions can be formed in the pad-level dielectric material layer. In another embodiment, a layer stack of a proximal dielectric diffusion barrier layer and a pad-and-via-level dielectric material layer can be formed. Integrated pad and via cavities can be formed through the pad-and-via-level dielectric material layer, and can be filled with bonding pads containing dielectric diffusion barrier portions and integrated pad and via structures.

公开(公告)号：US11444039B2

公开(公告)日：2022-09-13

申请号：US16888055

申请日：2020-05-29

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Noriaki Oda ,  Teruo Okina

IPC: H01L23/48 ,  H01L23/00 ,  H01L25/065 ,  H01L25/18 ,  H01L25/00

Abstract: Semiconductor devices can be formed over a semiconductor substrate, and interconnect-level dielectric material layers embedding metal interconnect structures can be formed thereupon. In one embodiment, a pad-connection-via-level dielectric material layer, a proximal dielectric diffusion barrier layer, and a pad-level dielectric material layer can be formed. Bonding pads surrounded by dielectric diffusion barrier portions can be formed in the pad-level dielectric material layer. In another embodiment, a layer stack of a proximal dielectric diffusion barrier layer and a pad-and-via-level dielectric material layer can be formed. Integrated pad and via cavities can be formed through the pad-and-via-level dielectric material layer, and can be filled with bonding pads containing dielectric diffusion barrier portions and integrated pad and via structures.