公开(公告)号：US10290804B2

公开(公告)日：2019-05-14

申请号：US15637357

申请日：2017-06-29

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Ricardo Ruiz ,  Jeffrey Lille ,  Mac D. Apodaca ,  Derek Stewart ,  Lei Wan ,  Bruce Terris

IPC: H01L21/00 ,  H01L45/00 ,  H01L27/24 ,  H01L21/02

Abstract: Resistive memory cells containing nanoparticles are formed between two electrodes. The nanoparticles may be embedded in a matrix or sintered together without a matrix. The memory cells may be projected memory cells or barrier modulated cells. Polymeric ligands may be used to deposit the nanoparticles over a substrate, followed by an optional removal or replacement of the polymeric ligands.