公开(公告)号：US20200027835A1

公开(公告)日：2020-01-23

申请号：US16432415

申请日：2019-06-05

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Yu-Hsien HSU ,  Satoshi SHIMIZU ,  Shunsuke AKIMOTO

IPC: H01L23/535 ,  H01L27/11582 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11524 ,  H01L29/06 ,  H01L29/40

Abstract: A dielectric spacer assembly including an annular dielectric isolation structure is formed through in-process source-level material layers. An alternating stack of insulating layers and spacer material layers is formed over the in-process source-level material layers. A contact via cavity is formed through the dielectric spacer assembly, and is filled within a dielectric spacer and a sacrificial via fill structure. The dielectric spacer assembly protects the dielectric spacer during replacement of a source-level sacrificial layer with a source contact layer. The sacrificial via fill structure is subsequently replaced with a through-memory-level contact via structure.