公开(公告)号：US10957648B2

公开(公告)日：2021-03-23

申请号：US16432415

申请日：2019-06-05

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Yu-Hsien Hsu ,  Satoshi Shimizu ,  Shunsuke Akimoto

IPC: H01L27/11529 ,  H01L23/535 ,  H01L27/11582 ,  H01L27/11556 ,  H01L29/40 ,  H01L27/11524 ,  H01L29/06 ,  H01L27/1157

Abstract: A dielectric spacer assembly including an annular dielectric isolation structure is formed through in-process source-level material layers. An alternating stack of insulating layers and spacer material layers is formed over the in-process source-level material layers. A contact via cavity is formed through the dielectric spacer assembly, and is filled within a dielectric spacer and a sacrificial via fill structure. The dielectric spacer assembly protects the dielectric spacer during replacement of a source-level sacrificial layer with a source contact layer. The sacrificial via fill structure is subsequently replaced with a through-memory-level contact via structure.

公开(公告)号：US09768183B2

公开(公告)日：2017-09-19

申请号：US14713579

申请日：2015-05-15

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Shunsuke Akimoto ,  Hidetoshi Nakamoto ,  Keita Kumamoto ,  Hidehito Koseki ,  Yuji Takahashi ,  Noritaka Fukuo ,  Tomoyasu Kakegawa ,  Takuya Futase

IPC: H01L29/788 ,  H01L29/40 ,  H01L21/44 ,  H01L21/336 ,  H01L27/11524 ,  H01L29/66

CPC classification number: H01L27/11524 ,  H01L29/66825

Abstract: An initial etch forms a trench over first contact areas of a plurality of NAND strings, the initial etch also forming individual openings over second contact areas of the plurality of NAND strings. Material is added in the trench to reduce an area of exposed bottom surface of the trench while maintaining the individual openings without substantial reduction of bottom surface area. Subsequent further etching extends the trench and the plurality of individual openings.