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公开(公告)号：US11942327B2
公开(公告)日：2024-03-26
申请号：US17659388
申请日：2022-04-15
IPC分类号： H01L21/00 , H01L21/304 , H01L29/16
CPC分类号： H01L21/3043 , H01L29/1602 , H01L29/1608
摘要： A method of singulating a silicon carbide (SiC) semiconductor wafer can include defining a cut within the silicon carbide (SiC) semiconductor wafer by performing a partial dicing operation where the SiC semiconductor wafer is aligned along a plane and the cut has a depth less than a first thickness of the SiC semiconductor wafer. The cut is aligned along a vertical direction orthogonal to the plane such that a portion of the SiC semiconductor wafer has a second thickness that extends between a bottom of the cut and an outer surface of the SiC semiconductor wafer. The method can further include defining a cleave, by performing a cleaving operation, through the portion of the SiC semiconductor wafer having the second thickness. The cleave can be aligned with the cut and extending to the outer surface of the SiC semiconductor wafer.
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公开(公告)号：US11309188B2
公开(公告)日：2022-04-19
申请号：US15974984
申请日：2018-05-09
IPC分类号： H01L21/46 , H01L21/304 , H01L29/16
摘要： A method of singulating a silicon carbide (SiC) semiconductor wafer can include defining a cut within the silicon carbide (SiC) semiconductor wafer by performing a partial dicing operation where the SiC semiconductor wafer is aligned along a plane and the cut has a depth less than a first thickness of the SiC semiconductor wafer. The cut is aligned along a vertical direction orthogonal to the plane such that a portion of the SiC semiconductor wafer has a second thickness that extends between a bottom of the cut and an outer surface of the SiC semiconductor wafer. The method can further include defining a cleave, by performing a cleaving operation, through the portion of the SiC semiconductor wafer having the second thickness. The cleave can be aligned with the cut and extending to the outer surface of the SiC semiconductor wafer.
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