公开(公告)号：US20200227402A1

公开(公告)日：2020-07-16

申请号：US16249553

申请日：2019-01-16

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Gourab SABUI ,  Yupeng CHEN ,  Umesh SHARMA

IPC: H01L27/02 ,  H01L29/866 ,  H01L29/66 ,  H01L29/36 ,  H01L29/06

Abstract: In a general aspect, a semiconductor device can include a heavily-doped substrate of a first conductivity type, a lightly-doped epitaxial layer of a second conductivity type disposed on the heavily-doped substrate, and a heavily-doped epitaxial layer of the second conductivity type disposed on the lightly-doped epitaxial layer. The heavily-doped epitaxial layer can have a doping concentration that is greater than a doping concentration of the lightly-doped epitaxial layer. At least a portion of the heavily-doped substrate can be included in a first terminal of a Zener diode, and at least a portion of the lightly-doped epitaxial layer and at least a portion of the heavily-doped epitaxial layer can be included in a second terminal of the Zener diode. The semiconductor device can further include a termination trench that extends through the heavily-doped epitaxial layer and the lightly-doped epitaxial layer, and terminates in the heavily-doped substrate.