公开(公告)号：US20230343777A1

公开(公告)日：2023-10-26

申请号：US17659993

申请日：2022-04-20

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Rouying ZHAN ,  Yupeng CHEN

IPC: H01L27/02

CPC classification number: H01L27/0262

Abstract: In an example, a semiconductor device includes a region of semiconductor material with a buried doped region of a first conductivity type. A first well region of the first conductivity type is in the region of semiconductor material and is electrically coupled to the buried doped region. A second well region of a second conductivity type is in the region of semiconductor material and has a first peak dopant concentration. A third well region of the second conductivity type abuts edges of the second well region. The third well region is interposed between the first well region and the second well region and has a second peak dopant concentration that is different than the first peak dopant concentration. A doped anode region of the second conductivity type is in the first well region, a doped cathode region of the first conductivity type is in the second well region, and a doped contact region of the second conductivity type is in the second well region. The semiconductor device can be configured as a semiconductor-controlled rectifier (SCR) ESD device where the controlling mechanisms for DC breakdown voltage and holding voltage are decoupled. Other related examples and methods are disclosed herein.

公开(公告)号：US20210118870A1

公开(公告)日：2021-04-22

申请号：US16948817

申请日：2020-10-01

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Yupeng CHEN

IPC: H01L27/02

Abstract: In a general aspect, an apparatus can include a semiconductor layer of a first conductivity type and a lateral bipolar device disposed in the semiconductor layer. The apparatus can further include an isolation trench disposed in the semiconductor layer in a base region of the lateral bipolar device. The isolation trench can be disposed between an emitter implant of the lateral bipolar device and a collector implant of the lateral bipolar device. The emitter implant and the collector implant can be of a second conductivity type, opposite the first conductivity type.

公开(公告)号：US20190067269A1

公开(公告)日：2019-02-28

申请号：US15684556

申请日：2017-08-23

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Yupeng CHEN ,  Steven M. ETTER ,  Umesh SHARMA

IPC: H01L27/02 ,  H01L27/06 ,  H01L29/732 ,  H01L29/861 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L23/535 ,  H01L29/66

CPC classification number: H01L27/0248 ,  H01L23/535 ,  H01L27/0255 ,  H01L27/0259 ,  H01L27/0664 ,  H01L29/0638 ,  H01L29/0649 ,  H01L29/0692 ,  H01L29/0804 ,  H01L29/0821 ,  H01L29/1004 ,  H01L29/66136 ,  H01L29/66234 ,  H01L29/732 ,  H01L29/7322 ,  H01L29/861 ,  H01L29/8611 ,  H01L29/8613

Abstract: In one embodiment, a TVS semiconductor device includes a P-N diode that is connected in parallel with a bipolar transistor wherein a breakdown voltage of the bipolar transistor is less than a breakdown voltage of the P-N diode.

公开(公告)号：US20240203975A1

公开(公告)日：2024-06-20

申请号：US18588372

申请日：2024-02-27

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Steven M. ETTER ,  Yupeng CHEN

IPC: H01L27/02 ,  H01L29/866

CPC classification number: H01L27/0248 ,  H01L29/866

Abstract: In an example, a semiconductor device includes a first steering diode and a second steering diode at a top side of a region of semiconductor material, a first Zener diode buried within the region of semiconductor material, and a second Zener diode at a bottom side of the region of semiconductor material. The semiconductor device is configured as a bi-directional electrostatic discharge (ESD) structure. The first Zener diode and the first steering diodes are configured to respond to a positive ESD pulse, and the second Zener diode and the second steering diode are configured to respond to a negative ESD pulse. The steering diodes are configured to have low capacitances and the Zener diodes are configured to provide enhanced ESD protection. Other related examples and methods are disclosed herein.

公开(公告)号：US20230253397A1

公开(公告)日：2023-08-10

申请号：US17650451

申请日：2022-02-09

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Steven M. ETTER ,  Yupeng CHEN

IPC: H01L27/02 ,  H01L29/866

CPC classification number: H01L27/0248 ,  H01L29/866

Abstract: In an example, a semiconductor device includes a first steering diode and a second steering diode at a top side of a region of semiconductor material, a first Zener diode buried within the region of semiconductor material, and a second Zener diode at a bottom side of the region of semiconductor material. The semiconductor device is configured as a bi-directional electrostatic discharge (ESD) structure. The first Zener diode and the first steering diodes are configured to respond to a positive ESD pulse, and the second Zener diode and the second steering diode are configured to respond to a negative ESD pulse. The steering diodes are configured to have low capacitances and the Zener diodes are configured to provide enhanced ESD protection. Other related examples and methods are disclosed herein.

公开(公告)号：US20160225756A1

公开(公告)日：2016-08-04

申请号：US15094853

申请日：2016-04-08

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： David D. MARREIRO ,  Yupeng CHEN ,  Ralph WALL ,  Umesh SHARMA ,  Harry Yue GEE

IPC: H01L27/02 ,  H01L29/74

CPC classification number: H01L27/0262 ,  H01L27/0248 ,  H01L29/7416

Abstract: In one embodiment, an ESD device is configured to include a trigger device that assists in forming a trigger of the ESD device. The trigger device is configured to enable a transistor or a transistor of an SCR responsively to an input voltage having a value that is no less than the trigger value of the ESD device.

Abstract translation: 在一个实施例中，ESD装置被配置为包括有助于形成ESD装置的触发的触发装置。 触发装置被配置为使得响应于具有不小于ESD装置的触发值的值的输入电压的SCR的晶体管或晶体管。

公开(公告)号：US20240387510A1

公开(公告)日：2024-11-21

申请号：US18777737

申请日：2024-07-19

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Derrick JOHNSON ,  Yupeng CHEN ,  Ralph N. WALL ,  Mark GRISWOLD

IPC: H01L27/02 ,  H01L27/092

Abstract: In an example, a semiconductor device includes a semiconductor substrate of a first conductivity type and a semiconductor region of the first conductivity type over the semiconductor substrate. A well region of a second conductivity type is in the semiconductor region. A doped region of the first conductivity type is in the well region. A doped region of the second conductivity type is in the well region. A doped region of the second conductivity type is in the semiconductor substrate at a bottom side. A doped region of the first conductivity type is in the semiconductor substrate at the bottom side. A first conductor is at a top side of the semiconductor region and a second conductor is at the bottom side. In some examples, one or more of doped regions at the bottom side is a patterned doped region.

公开(公告)号：US20230361107A1

公开(公告)日：2023-11-09

申请号：US17662263

申请日：2022-05-06

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Derrick JOHNSON ,  Yupeng CHEN ,  Ralph N. WALL ,  Mark GRISWOLD

IPC: H01L27/02 ,  H01L27/092

CPC classification number: H01L27/0262 ,  H01L27/0928

Abstract: In an example, a semiconductor device includes a semiconductor substrate of a first conductivity type and a semiconductor region of the first conductivity type over the semiconductor substrate. A well region of a second conductivity type is in the semiconductor region. A doped region of the first conductivity type is in the well region. A doped region of the second conductivity type is in the well region. A doped region of the second conductivity type is in the semiconductor substrate at a bottom side. A doped region of the first conductivity type is in the semiconductor substrate at the bottom side. A first conductor is at a top side of the semiconductor region and a second conductor is at the bottom side. In some examples, one or more of doped regions at the bottom side is a patterned doped region.

公开(公告)号：US20220399717A1

公开(公告)日：2022-12-15

申请号：US17804692

申请日：2022-05-31

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Yupeng CHEN

IPC: H02H9/04 ,  H01L23/552 ,  H01L27/02 ,  H03H7/01

Abstract: In some aspects, the techniques described herein relate to an electromagnetic interference (EMI) filter circuit including: an input terminal; an output terminal; an electrical ground terminal; a resistor electrically coupled between the input terminal and the output terminal; a first bipolar transistor including: a collector terminal electrically coupled with the input terminal; an emitter terminal electrically coupled with the electrical ground terminal; and a base terminal that is electrically floating; and a second bipolar transistor including: a collector terminal electrically coupled with the output terminal; an emitter terminal electrically coupled with the electrical ground terminal; and a base terminal that is electrically floating.

公开(公告)号：US20200227402A1

公开(公告)日：2020-07-16

申请号：US16249553

申请日：2019-01-16

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Gourab SABUI ,  Yupeng CHEN ,  Umesh SHARMA

IPC: H01L27/02 ,  H01L29/866 ,  H01L29/66 ,  H01L29/36 ,  H01L29/06

Abstract: In a general aspect, a semiconductor device can include a heavily-doped substrate of a first conductivity type, a lightly-doped epitaxial layer of a second conductivity type disposed on the heavily-doped substrate, and a heavily-doped epitaxial layer of the second conductivity type disposed on the lightly-doped epitaxial layer. The heavily-doped epitaxial layer can have a doping concentration that is greater than a doping concentration of the lightly-doped epitaxial layer. At least a portion of the heavily-doped substrate can be included in a first terminal of a Zener diode, and at least a portion of the lightly-doped epitaxial layer and at least a portion of the heavily-doped epitaxial layer can be included in a second terminal of the Zener diode. The semiconductor device can further include a termination trench that extends through the heavily-doped epitaxial layer and the lightly-doped epitaxial layer, and terminates in the heavily-doped substrate.