公开(公告)号：US10396216B2

公开(公告)日：2019-08-27

申请号：US15585839

申请日：2017-05-03

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Yi Su ,  Ashok Challa ,  Tirthajyoti Sarkar ,  Min Kyung Ko

IPC: H01L29/47 ,  H01L29/78 ,  H01L29/872 ,  H01L29/06 ,  H01L29/40

Abstract: In one general aspect, a device can include a first trench disposed in a semiconductor region, a second trench disposed in the semiconductor region, and a recess disposed in the semiconductor region between the first trench and the second trench. The recess has a sidewall and a bottom surface. The device also includes a Schottky interface along a sidewall of the recess and the bottom surface of the recess excludes a Schottky interface.