公开(公告)号：US10396216B2

公开(公告)日：2019-08-27

申请号：US15585839

申请日：2017-05-03

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Yi Su ,  Ashok Challa ,  Tirthajyoti Sarkar ,  Min Kyung Ko

IPC: H01L29/47 ,  H01L29/78 ,  H01L29/872 ,  H01L29/06 ,  H01L29/40

Abstract: In one general aspect, a device can include a first trench disposed in a semiconductor region, a second trench disposed in the semiconductor region, and a recess disposed in the semiconductor region between the first trench and the second trench. The recess has a sidewall and a bottom surface. The device also includes a Schottky interface along a sidewall of the recess and the bottom surface of the recess excludes a Schottky interface.

公开(公告)号：US12051967B2

公开(公告)日：2024-07-30

申请号：US17806597

申请日：2022-06-13

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Dean E. Probst ,  Joseph Andrew Yedinak ,  Balaji Padmanabhan ,  Peter A Burke ,  Jeffery A. Neuls ,  Ashok Challa

IPC: H02M1/34 ,  H01L27/07

CPC classification number: H02M1/34 ,  H01L27/0727

Abstract: In some aspects, the techniques described herein relate to a circuit including: a metal-oxide semiconductor field-effect transistor (MOSFET) including a gate, a source, and a drain; and a snubber circuit coupled between the drain and the source, the snubber circuit including: a diode having a cathode and an anode, the cathode being coupled with the drain; a capacitor having a first terminal coupled with the anode, and a second terminal coupled with the source; and a resistor having a first terminal coupled with the anode and the first terminal of the capacitor, and a second terminal coupled with the source.

公开(公告)号：US20230403003A1

公开(公告)日：2023-12-14

申请号：US18310153

申请日：2023-05-01

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Jaume ROIG-GUITART ,  Dean E. PROBST ,  Ashok Challa

IPC: H03K17/16 ,  H03K17/0412 ,  H01L29/78 ,  H01L27/088 ,  H01L27/06

CPC classification number: H03K17/161 ,  H03K17/04123 ,  H01L29/7813 ,  H01L27/088 ,  H01L27/0629

Abstract: A circuit includes a metal-oxide semiconductor field-effect transistor (MOSFET) and a snubber circuit coupled between a drain and a source of the MOSFET. The snubber circuit includes a transistor disposed in parallel to the MOSFET. The transistor has a floating gate. The circuit further includes a capacitor in series with the transistor, and a resistor disposed parallel to the capacitor.