公开(公告)号：US20240387425A1

公开(公告)日：2024-11-21

申请号：US18787369

申请日：2024-07-29

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Srinivasa Reddy YEDURU ,  George CHANG

IPC: H01L23/00

Abstract: In some aspects, the techniques described herein relate to an electronic device including: a substrate; a metallization layer, the metallization layer having: a first surface disposed on the substrate; a second surface opposite the first surface; and a corrosion-prevention implant layer disposed in the metallization layer, the corrosion-prevention implant layer extending from the second surface to a depth from the second surface in the metallization layer, the depth being less than a thickness of the metallization layer; and an electrical connector coupled with the second surface.

公开(公告)号：US20220328643A1

公开(公告)日：2022-10-13

申请号：US17658771

申请日：2022-04-11

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Srinivasa Reddy YEDURU ,  Naveen GANAGONA ,  George CHANG ,  Byoungyong PARK ,  Soonjae LEE

IPC: H01L29/45 ,  H01L21/265 ,  H01L21/285 ,  H01L21/304 ,  H01L21/306

Abstract: In some aspects, the techniques described herein relate to a semiconductor device including: a substrate having a first side and a second side, the second side being opposite the first side; active circuitry disposed on the first side of the substrate; a metallic implant disposed in the substrate, the metallic implant being a blanket implant on the second side of the substrate; and a metallic layer disposed on the second side of the substrate, the metallic layer and the second side of the substrate including the metallic implant defining an ohmic contact.

公开(公告)号：US20220328434A1

公开(公告)日：2022-10-13

申请号：US17658232

申请日：2022-04-06

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Srinivasa Reddy YEDURU ,  George CHANG

IPC: H01L23/00

Abstract: In some aspects, the techniques described herein relate to an electronic device including: a substrate; a metallization layer, the metallization layer having: a first surface disposed on the substrate; a second surface opposite the first surface; and a corrosion-prevention implant layer disposed in the metallization layer, the corrosion-prevention implant layer extending from the second surface to a depth from the second surface in the metallization layer, the depth being less than a thickness of the metallization layer; and an electrical connector coupled with the second surface.

公开(公告)号：US20210296176A1

公开(公告)日：2021-09-23

申请号：US17248514

申请日：2021-01-28

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Srinivasa Reddy YEDURU ,  George CHANG ,  Gordon M. GRIVNA

IPC: H01L21/78 ,  H01L21/268 ,  H01L21/3065

Abstract: A method for singulating a semiconductor wafer includes providing the semiconductor wafer having a plurality of semiconductor devices adjacent to a first surface, the plurality of semiconductor devices separated by spaces corresponding to where singulation lines will be formed. The method includes providing an alignment structure adjacent to the first surface and providing a material on a second surface of the semiconductor wafer, wherein the material is absent on the second surface directly below the alignment structure. The method includes passing an IR signal through the semiconductor wafer from the second surface to the first surface where the material is absent to detect the alignment structure and align a singulation device to the spaces where the singulation lines on will be formed. The method includes using the singulation device to remove portions of the layer of material aligned to the singulation lines and thereafter plasma etching the semiconductor wafer from the first surface to the second surface through the spaces to form the singulation lines thereby singulating the semiconductor wafer.