公开(公告)号：US10074822B2

公开(公告)日：2018-09-11

申请号：US14922636

申请日：2015-10-26

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Satoshi Seo ,  Tsunenori Suzuki ,  Takeyoshi Watabe ,  Kunihiko Suzuki ,  Toshiki Hamada ,  Rina Nakamura ,  Hayato Yamawaki ,  Ayumi Sato ,  Harue Osaka

IPC: H01L51/50 ,  H01L51/00

CPC classification number: H01L51/5092 ,  H01L51/0025 ,  H01L51/0054 ,  H01L51/0058 ,  H01L51/006 ,  H01L51/0061 ,  H01L51/0072 ,  H01L51/0074 ,  H01L51/0085 ,  H01L51/5072

Abstract: To provide a novel light-emitting element or a highly reliable light-emitting element. To provide a light-emitting device, a display device, an electronic device, and a lighting device each of which can be manufactured at a low cost. To provide a light-emitting element including an anode, a cathode, and an EL layer between the anode and the cathode. The EL layer includes a light-emitting layer and an electron injection transport layer between the light-emitting layer and the cathode, and the amount of a halogen detected from a material forming the electron injection transport layer is less than or equal to 30 ppm.

公开(公告)号：US20150080574A1

公开(公告)日：2015-03-19

申请号：US14484693

申请日：2014-09-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hideko Inoue ,  Tomohiro Kubota ,  Satoshi Seo ,  Hayato Yamawaki ,  Yasushi Kitano

IPC: H01L51/00 ,  C07D409/10

CPC classification number: H01L51/0074 ,  C07D409/10 ,  C09K11/06 ,  C09K2211/1018 ,  H01L51/0072 ,  H01L51/5012

Abstract: A dibenzo[f,h]quinoxaline derivative in which impurities are reduced and a novel method of synthesizing the dibenzo[f,h]quinoxaline derivative in which impurities are reduced are provided. In addition, a light-emitting element, a light-emitting device, an electronic appliance, or a lighting device with high emission efficiency and high reliability in which the dibenzo[f,h]quinoxaline derivative is used as an EL material is provided. In the synthesis method, a 2-(chloroaryl)dibenzo[f,h]quinoxaline derivative is used as a synthetic intermediate in a synthetic pathway so that an impurity contained in a final product can be removed easily by purification by sublimation.

Abstract translation: 提供其中杂质减少的二苯并[f，h]喹喔啉衍生物和合成其中杂质减少的二苯并[f，h]喹喔啉衍生物的新方法。 此外，提供了使用二苯并[f，h]喹喔啉衍生物作为EL材料的发光效率高，可靠性高的发光元件，发光元件，电子设备或照明装置。 在合成方法中，使用2-（氯芳基）二苯并[f，h]喹喔啉衍生物作为合成途径中的合成中间体，使得通过升华纯化可以容易地除去最终产物中所含的杂质。

公开(公告)号：US09695158B2

公开(公告)日：2017-07-04

申请号：US14484693

申请日：2014-09-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hideko Inoue ,  Tomohiro Kubota ,  Satoshi Seo ,  Hayato Yamawaki ,  Yasushi Kitano

IPC: C07D409/10 ,  H01L51/50 ,  H01L51/00

CPC classification number: H01L51/0074 ,  C07D409/10 ,  C09K11/06 ,  C09K2211/1018 ,  H01L51/0072 ,  H01L51/5012

Abstract: A composition comprising a dibenzo[f,h]quinoxaline derivative in which impurities are reduced and a method of synthesizing dibenzo[f,h]quinoxaline in which impurities are reduced are provided. In addition, a light-emitting element, a light-emitting device, an electronic appliance, or a lighting device with high emission efficiency and high reliability in which dibenzo[f,h]quinoxaline is used as an EL material is provided. In the synthesis method, 2-(chloroaryl)dibenzo[f,h]quinoxaline is used as a synthetic intermediate in a synthetic pathway so that an impurity contained in a final product can be removed easily by purification by sublimation.

公开(公告)号：US10153449B2

公开(公告)日：2018-12-11

申请号：US14882701

申请日：2015-10-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Satoshi Seo ,  Takeyoshi Watabe ,  Rina Nakamura ,  Harue Osaka ,  Ayumi Sato ,  Kunihiko Suzuki ,  Hayato Yamawaki

IPC: H01L51/50 ,  H01L51/00

Abstract: A novel light-emitting element or a highly reliable light-emitting element is provided. The light-emitting element includes an anode, a cathode, and an EL layer between the anode and the cathode. The EL layer includes at least a light-emitting layer. The light-emitting layer includes at least a first organic compound and a second organic compound. The energy for liberating halogen from a halogen-substituted product of the first organic compound in a radical anion state and in a triplet excited state is less than or equal to 1.00 eV. The amount of halogen-substituted product in the second organic compound is not increased with an increase in driving time of the light-emitting element.