公开(公告)号：US20150311260A1

公开(公告)日：2015-10-29

申请号：US14690834

申请日：2015-04-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Naoyuki SENDA ,  Masataka NAKADA ,  Takayuki ABE ,  Koji KUSUNOKI ,  Hideaki SHISHIDO

IPC: H01L27/32 ,  H01L51/00

CPC classification number: H01L27/323 ,  G06F3/0412 ,  G06F3/044 ,  G06F3/045 ,  G06F15/0216 ,  H01L27/322 ,  H01L51/0097 ,  H01L51/5253 ,  H01L51/5284 ,  H01L2251/5338

Abstract: A flexible input and output device in which defects due to a crack is reduced. The input and output device includes a first flexible substrate, a second flexible substrate, a first buffer layer, a first crack inhibiting layer, an input device, and a light-emitting element. A first surface of the first flexible substrate faces a second surface of the second flexible substrate. The first buffer layer, the first crack inhibiting layer, and the input device are provided on the first surface side of the first flexible substrate. The first buffer layer includes a region overlapping with the first crack inhibiting layer. The first buffer layer is between the first crack inhibiting layer and the first surface. The input device includes a transistor and a sensor element. The light-emitting element is provided on the second surface side of the second flexible substrate.

Abstract translation: 一种灵活的输入和输出装置，其中减少了由于裂纹引起的缺陷。 输入输出装置包括第一柔性基板，第二柔性基板，第一缓冲层，第一裂纹抑制层，输入装置和发光元件。 第一柔性基板的第一表面面向第二柔性基板的第二表面。 第一缓冲层，第一裂纹抑制层和输入装置设置在第一柔性基板的第一表面侧。 第一缓冲层包括与第一裂纹抑制层重叠的区域。 第一缓冲层位于第一裂纹抑制层和第一表面之间。 输入装置包括晶体管和传感器元件。 发光元件设置在第二柔性基板的第二表面侧。

公开(公告)号：US20150214379A1

公开(公告)日：2015-07-30

申请号：US14677071

申请日：2015-04-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Takayuki ABE ,  Hideaki SHISHIDO

IPC: H01L29/786 ,  H01L27/32 ,  H01L29/423

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L27/3248 ,  H01L29/42376 ,  H01L29/42384 ,  H01L29/78606 ,  H01L29/78645 ,  H01L29/78648

Abstract: The threshold voltage is shifted in a negative or positive direction in some cases by an unspecified factor in a manufacturing process of the thin film transistor. If the amount of shift from 0 V is large, driving voltage is increased, which results in an increase in power consumption of a semiconductor device. Thus, a resin layer having good flatness is formed as a first protective insulating film covering the oxide semiconductor layer, and then a second protective insulating film is formed by a sputtering method or a plasma CVD method under a low power condition over the resin layer. Further, in order to adjust the threshold voltage to a desired value, gate electrodes are provided over and below an oxide semiconductor layer.

Abstract translation: 在薄膜晶体管的制造过程中，阈值电压在负方向或正方向上偏移一些未指定因子。 如果从0V的偏移量大，则驱动电压增加，这导致半导体器件的功耗的增加。 因此，形成具有良好平坦度的树脂层作为覆盖氧化物半导体层的第一保护绝缘膜，然后通过溅射法或等离子体CVD法在低功率条件下在树脂层上形成第二保护绝缘膜。 此外，为了将阈值电压调整为期望值，在氧化物半导体层的上方和下方设置栅电极。

公开(公告)号：US20210028392A1

公开(公告)日：2021-01-28

申请号：US17067148

申请日：2020-10-09

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Masataka NAKADA ,  Takayuki ABE ,  Naoyuki SENDA

IPC: H01L51/52 ,  H01L51/00

Abstract: A flexible device with fewer defects caused by a crack is provided. A flexible device with high productivity is also provided. Furthermore, a flexible device with less display failure even in a high temperature and high humidity environment is provided. A light-emitting device includes a first flexible substrate, a second flexible substrate, a buffer layer, a first crack inhibiting layer, and a light-emitting element. A first surface of the first flexible substrate faces a second surface of the second flexible substrate. The buffer layer and the first crack inhibiting layer are provided over the first surface of the first flexible substrate. The buffer layer overlaps with the first crack inhibiting layer. The light-emitting element is provided over the second surface of the second flexible substrate.

公开(公告)号：US20180175322A1

公开(公告)日：2018-06-21

申请号：US15890399

申请日：2018-02-07

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Masataka NAKADA ,  Takayuki ABE ,  Naoyuki SENDA

IPC: H01L51/52 ,  H01L51/00 ,  H01L27/32

Abstract: A flexible device with fewer defects caused by a crack is provided. A flexible device with high productivity is also provided. Furthermore, a flexible device with less display failure even in a high temperature and high humidity environment is provided. A light-emitting device includes a first flexible substrate, a second flexible substrate, a buffer layer, a first crack inhibiting layer, and a light-emitting element. A first surface of the first flexible substrate faces a second surface of the second flexible substrate. The buffer layer and the first crack inhibiting layer are provided over the first surface of the first flexible substrate. The buffer layer overlaps with the first crack inhibiting layer. The light-emitting element is provided over the second surface of the second flexible substrate.

公开(公告)号：US20150255740A1

公开(公告)日：2015-09-10

申请号：US14632115

申请日：2015-02-26

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Masataka NAKADA ,  Takayuki ABE ,  Naoyuki SENDA

IPC: H01L51/00 ,  H01L27/32 ,  H01L51/52

CPC classification number: H01L51/5246 ,  H01L27/323 ,  H01L51/0097 ,  H01L51/5237 ,  H01L51/524 ,  H01L51/5243 ,  H01L2251/5338 ,  Y02E10/549

Abstract: A flexible device with fewer defects caused by a crack is provided. A flexible device with high productivity is also provided. Furthermore, a flexible device with less display failure even in a high temperature and high humidity environment is provided. A light-emitting device includes a first flexible substrate, a second flexible substrate, a buffer layer, a first crack inhibiting layer, and a light-emitting element. A first surface of the first flexible substrate faces a second surface of the second flexible substrate. The buffer layer and the first crack inhibiting layer are provided over the first surface of the first flexible substrate. The buffer layer overlaps with the first crack inhibiting layer. The light-emitting element is provided over the second surface of the second flexible substrate.

Abstract translation: 提供了由裂纹引起的缺陷较少的柔性装置。 还提供了高生产率的柔性装置。 此外，即使在高温高湿环境下也能提供显示故障少的柔性装置。 发光器件包括第一柔性衬底，第二柔性衬底，缓冲层，第一裂纹抑制层和发光元件。 第一柔性基板的第一表面面向第二柔性基板的第二表面。 缓冲层和第一裂纹抑制层设置在第一柔性基板的第一表面上。 缓冲层与第一裂纹抑制层重叠。 发光元件设置在第二柔性基板的第二表面上。

公开(公告)号：US20240428737A1

公开(公告)日：2024-12-26

申请号：US18742105

申请日：2024-06-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Manabu SATO ,  Hironori MATSUMOTO ,  Takayuki ABE ,  Junichi KOEZUKA

IPC: G09G3/3241 ,  G09G3/3275

Abstract: A highly reliable semiconductor device or display device is provided. The semiconductor device has a function of inhibiting hot-carrier degradation of a transistor and includes a switch which includes a plurality of transistors connected in series and a diode connected to a node between the transistors. An appropriate potential supplied from the diode to the node can lower a source-drain voltage before the transistor is turned on, so that hot-carrier degradation can be inhibited.